IRFW630BTM-FP001 Pricing (USD) [175759pcs Stock]
- 1 pcs$0.21045
- Part Number:
- IRFW630BTM-FP001
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 200V 9A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Single, Thyristors - SCRs - Modules, Transistors - IGBTs - Arrays, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in ON Semiconductor IRFW630BTM-FP001 electronic components. IRFW630BTM-FP001 can be shipped within 24 hours after order. If you have any demands for IRFW630BTM-FP001, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFW630BTM-FP001 Product Attributes
Part Number :
IRFW630BTM-FP001
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 200V 9A D2PAK
Series :
-
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
400 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
720pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
3.13W (Ta), 72W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D²PAK (TO-263AB)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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