Vishay Siliconix - SI7872DP-T1-GE3

KEY Part #: K6524073

SI7872DP-T1-GE3 Pricing (USD) [3953pcs Stock]

  • 3,000 pcs$0.42841

Part Number:
SI7872DP-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET 2N-CH 30V 6.4A PPAK SO-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - JFETs, Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Arrays, Diodes - Zener - Arrays, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Vishay Siliconix SI7872DP-T1-GE3 electronic components. SI7872DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7872DP-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7872DP-T1-GE3 Product Attributes

Part Number : SI7872DP-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET 2N-CH 30V 6.4A PPAK SO-8
Series : LITTLE FOOT®
Part Status : Obsolete
FET Type : 2 N-Channel (Half Bridge)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6.4A
Rds On (Max) @ Id, Vgs : 22 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 1.4W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : PowerPAK® SO-8 Dual
Supplier Device Package : PowerPAK® SO-8 Dual

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